| PART |
Description |
Maker |
| N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| 28C64AF-15/J 28C64A-15/J 28C64AF-20/J 28C64A-20/J |
16-Bit DACs with 16-Channel Sample-and-Hold Outputs
Dual, Ultra-Low-Power, 8-Bit, Voltage-Output DACs
128Kx8 EEPROM 128Kx8 EEPROM
|
Microchip Technology, Inc.
|
| HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.0V Low Power CMOS slow SRAM
x8|3V|70/85/100|Low Power Slow SRAM - 1M
|
Hynix Semiconductor
|
| 28C010ERPGP-15 28C010ERPGP-12 28C010ERPGI-15 28C01 |
±15kV ESD-Protected, Slew-Rate-Limited, Low-Power, RS-485/RS-422 Transceivers
Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers
Low-RON, Dual-SPST/Single-SPDT Clickless Switches with Negative Rail Capability
Single/Dual/Quad, Micropower, Single-Supply, Rail-to-Rail Op Amps
High-/Full-Speed USB 2.0 Switches x8的EEPROM
128Kx8 EEPROM 128Kx8 EEPROM
Hex SPDT Data Switch x8的EEPROM
|
Infineon Technologies AG
Vishay Intertechnology, Inc.
TE Connectivity, Ltd.
ITT, Corp.
Jameco Electronics
|
| W24L011AJI |
HIGH SPEED SRAM 128Kx8
|
Winbond Electronics
|
| EDI88128CDXCC EDI88128CDXCM EDI88128CDXFC EDI88128 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| EDI88130LPSXCI EDI88130CSXFB EDI88130CSXCC EDI8813 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| EDI88128LPXNI EDI88128CXNB EDI88128CXNC EDI88128CX |
128Kx8 MONOLITHIC SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
